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Vishay SQJ414EP-T1_GE3
MOSFET N-CH 30V 30A PPAK SO-8
Manufacturer # :SQJ414EP-T1_GE3
Manufacturer :Vishay
Dasenic # :SQJ414EP-T1_GE3-DS
Datasheet :
SQJ414EP-T1_GE3 Datasheet
SQJ414EP-T1_GE3 DatasheetCustomer # :
Description : MOSFET N-CH 30V 30A PPAK SO-8 PowerPAK® SO-8
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| Quantity | Unit Price | Total |
In Stock: 481
MOQ :1 PCS
Packaging :PowerPAK® SO-8
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0
Total :$ 0.00
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Payment :
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SQJ414EP-T1_GE3 information
Vishay SQJ414EP-T1_GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):45W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:30A (Tc)
- Rds On ( Max) @ Id, Vgs:12mOhm @ 4.5A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:25 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1110 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
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