Images are for reference only.
1 : $0.8400
First-time registration with orders over $2,000 receives a $100 coupon. Register Now !
Vishay TN0201K-T1-E3
MOSFET N-CH 20V 420MA SOT23-3
Manufacturer # :TN0201K-T1-E3
Manufacturer :Vishay
Dasenic # :TN0201K-T1-E3-DS
Datasheet :
TN0201K-T1-E3 Datasheet
TN0201K-T1-E3 DatasheetCustomer # :
Description : MOSFET N-CH 20V 420MA SOT23-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.8400 | $ 0.84 |
In Stock: 526
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.84
Total :$ 0.84
Delivery :
Payment :
Help you to save your cost and time
Strict quality inspection and Reliable package for goods
Fast Reliable delivery to save time
Provide 365 days warranty after-sales service
TN0201K-T1-E3 information
Vishay TN0201K-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3 (TO-236)
- Power Dissipation ( Max):350mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:420mA (Ta)
- Rds On ( Max) @ Id, Vgs:1Ohm @ 300mA, 10V
- Vgs(th) ( Max) @ Id:3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:1.5 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.21.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
Related Products Recommended
We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.
