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Vishay SUM90100E-GE3
N-CHANNEL 200-V (D-S) MOSFET D2P
Manufacturer # :SUM90100E-GE3
Manufacturer :Vishay
Dasenic # :SUM90100E-GE3-DS
Datasheet :
SUM90100E-GE3 Datasheet
SUM90100E-GE3 DatasheetCustomer # :
Description : N-CHANNEL 200-V (D-S) MOSFET D2P
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 3.6090 | $ 3.61 |
| 100+ | $ 3.3564 | $ 335.64 |
| 1000+ | $ 3.2481 | $ 3248.1 |
| 10000+ | $ 3.0677 | $ 30677 |
In Stock: 8037
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 3.609
Total :$ 3.61
Delivery :
Payment :
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SUM90100E-GE3 information
Vishay SUM90100E-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-263 (D²Pak)
- Power Dissipation ( Max):375W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):200 V
- Current - Continuous Drain ( Id) @ 25° C:150A (Tc)
- Rds On ( Max) @ Id, Vgs:11.4mOhm @ 16A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:110 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:3930 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):7.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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