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Vishay SUD90330E-BE3
MOSFET N-CH 200V 35.8A TO252AA
Manufacturer # :SUD90330E-BE3
Manufacturer :Vishay
Dasenic # :SUD90330E-BE3-DS
Datasheet :
SUD90330E-BE3 Datasheet
SUD90330E-BE3 DatasheetCustomer # :
Description : MOSFET N-CH 200V 35.8A TO252AA
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 3.0400 | $ 3.04 |
| 10+ | $ 2.5000 | $ 25 |
| 100+ | $ 1.9320 | $ 193.2 |
| 500+ | $ 1.6380 | $ 819 |
| 1000+ | $ 1.5200 | $ 1520 |
In Stock: 577
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 3.04
Total :$ 3.04
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Payment :
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SUD90330E-BE3 information
Vishay SUD90330E-BE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-252AA
- Power Dissipation ( Max):125W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):200 V
- Current - Continuous Drain ( Id) @ 25° C:35.8A (Tc)
- Rds On ( Max) @ Id, Vgs:37.5mOhm @ 12.2A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:32 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1172 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):7.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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