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Vishay SUD50N04-8M8P-4BE3
MOSFET N-CH 40V 14A/50A DPAK
Manufacturer # :SUD50N04-8M8P-4BE3
Manufacturer :Vishay
Dasenic # :SUD50N04-8M8P-4BE3-DS
Datasheet :
SUD50N04-8M8P-4BE3 Datasheet
SUD50N04-8M8P-4BE3 DatasheetCustomer # :
Description : MOSFET N-CH 40V 14A/50A DPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.5706 | $ 5.71 |
| 2500+ | $ 0.3170 | $ 792.5 |
| 5000+ | $ 0.3069 | $ 1534.5 |
| 10000+ | $ 0.2967 | $ 2967 |
| 15000+ | $ 0.2865 | $ 4297.5 |
In Stock: 24000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.5706
Total :$ 0.57
Delivery :
Payment :
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SUD50N04-8M8P-4BE3 information
Vishay SUD50N04-8M8P-4BE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-252AA
- Power Dissipation ( Max):3.1W (Ta), 48.1W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:14A (Ta), 50A (Tc)
- Rds On ( Max) @ Id, Vgs:8.8mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:56 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2400 pF @ 20 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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