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Vishay SUD50N03-16P-GE3
MOSFET N-CH 30V TO252
Manufacturer # :SUD50N03-16P-GE3
Manufacturer :Vishay
Dasenic # :SUD50N03-16P-GE3-DS
Datasheet :
SUD50N03-16P-GE3 Datasheet
SUD50N03-16P-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 30V TO252
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.2366 | $ 12.37 |
| 2000+ | $ 0.8244 | $ 1648.8 |
| 6000+ | $ 0.7852 | $ 4711.2 |
| 10000+ | $ 0.7489 | $ 7489 |
In Stock: 2156
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.2366
Total :$ 1.24
Delivery :
Payment :
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SUD50N03-16P-GE3 information
Vishay SUD50N03-16P-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-252AA
- Power Dissipation ( Max):6.5W (Ta), 40.8W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:15A (Ta), 37A (Tc)
- Rds On ( Max) @ Id, Vgs:16mOhm @ 15A, 10V
- Vgs(th) ( Max) @ Id:3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:13 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1150 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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