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Vishay SUD50N03-09P-GE3
MOSFET N-CH 30V 63A TO252
Manufacturer # :SUD50N03-09P-GE3
Manufacturer :Vishay
Dasenic # :SUD50N03-09P-GE3-DS
Datasheet :
SUD50N03-09P-GE3 Datasheet
SUD50N03-09P-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 30V 63A TO252
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 2.0150 | $ 20.15 |
| 2000+ | $ 1.3433 | $ 2686.6 |
| 6000+ | $ 1.2928 | $ 7756.8 |
| 10000+ | $ 1.2423 | $ 12423 |
In Stock: 40
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.015
Total :$ 2.02
Delivery :
Payment :
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SUD50N03-09P-GE3 information
Vishay SUD50N03-09P-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-252AA
- Power Dissipation ( Max):7.5W (Ta), 65.2W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:63A (Tc)
- Rds On ( Max) @ Id, Vgs:9.5mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:16 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2200 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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