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Vishay SUD40N08-16-E3
MOSFET N-CH 80V 40A TO252
Manufacturer # :SUD40N08-16-E3
Manufacturer :Vishay
Dasenic # :SUD40N08-16-E3-DS
Datasheet :
SUD40N08-16-E3 Datasheet
SUD40N08-16-E3 DatasheetCustomer # :
Description : MOSFET N-CH 80V 40A TO252
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.6730 | $ 2.67 |
| 25+ | $ 2.2680 | $ 56.7 |
| 100+ | $ 1.8270 | $ 182.7 |
| 500+ | $ 1.6920 | $ 846 |
| 1000+ | $ 1.0980 | $ 1098 |
In Stock: 12941
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.673
Total :$ 2.67
Delivery :
Payment :
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SUD40N08-16-E3 information
Vishay SUD40N08-16-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-252AA
- Power Dissipation ( Max):3W (Ta), 136W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):80 V
- Current - Continuous Drain ( Id) @ 25° C:40A (Tc)
- Rds On ( Max) @ Id, Vgs:16mOhm @ 40A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:60 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1960 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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