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Vishay SUD35N10-26P-T4GE3
MOSFET N-CH 100V 35A TO252
Manufacturer # :SUD35N10-26P-T4GE3
Manufacturer :Vishay
Dasenic # :SUD35N10-26P-T4GE3-DS
Datasheet :
SUD35N10-26P-T4GE3 Datasheet
SUD35N10-26P-T4GE3 DatasheetCustomer # :
Description : MOSFET N-CH 100V 35A TO252
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 4.3342 | $ 43.34 |
| 2500+ | $ 2.4079 | $ 6019.75 |
| 5000+ | $ 2.3306 | $ 11653 |
| 10000+ | $ 2.2534 | $ 22534 |
| 15000+ | $ 2.1622 | $ 32433 |
In Stock: 2171
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 4.3342
Total :$ 4.33
Delivery :
Payment :
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SUD35N10-26P-T4GE3 information
Vishay SUD35N10-26P-T4GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-252AA
- Power Dissipation ( Max):8.3W (Ta), 83W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):100 V
- Current - Continuous Drain ( Id) @ 25° C:35A (Tc)
- Rds On ( Max) @ Id, Vgs:26mOhm @ 12A, 10V
- Vgs(th) ( Max) @ Id:4.4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:47 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2000 pF @ 12 V
- Drive Voltage ( Max Rds On, Min Rds On):7V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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