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Vishay SUD19P06-60-E3
MOSFET P-CH 60V 18.3A TO252
Manufacturer # :SUD19P06-60-E3
Manufacturer :Vishay
Dasenic # :SUD19P06-60-E3-DS
Datasheet :
SUD19P06-60-E3 Datasheet
SUD19P06-60-E3 DatasheetCustomer # :
Description : MOSFET P-CH 60V 18.3A TO252
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| Quantity | Unit Price | Total |
| 10+ | $ 0.5535 | $ 5.54 |
| 2000+ | $ 0.3690 | $ 738 |
| 4000+ | $ 0.3607 | $ 1442.8 |
| 6000+ | $ 0.3385 | $ 2031 |
| 10000+ | $ 0.3351 | $ 3351 |
In Stock: 38267
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.5535
Total :$ 0.55
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SUD19P06-60-E3 information
Vishay SUD19P06-60-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-252AA
- Power Dissipation ( Max):2.3W (Ta), 38.5W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:18.3A (Tc)
- Rds On ( Max) @ Id, Vgs:60mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:40 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1710 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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