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Vishay Intertechnology SQS484ENW-T1_GE3
MOSFET N-CH 40V 16A PPAK1212-8
Manufacturer # :SQS484ENW-T1_GE3
Manufacturer :Vishay Intertechnology
Dasenic # :4F168A-DS
Datasheet :
SQS484ENW-T1_GE3 Datasheet
SQS484ENW-T1_GE3 DatasheetSample :
Customer # :
Description : MOSFET N-CH 40V 16A PPAK1212-8 PowerPAK® 1212-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.554000 | $ 5.54 |
| 3000+ | $ 0.307800 | $ 923.4 |
| 6000+ | $ 0.291600 | $ 1749.6 |
| 9000+ | $ 0.270000 | $ 2430 |
| 30000+ | $ 0.267300 | $ 8019 |
In Stock: 36000
MOQ :1 PCS
Packaging :PowerPAK® 1212-8
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.554
Total :$ 0.55
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Package / Case:PowerPAK® 1212-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 1212-8
- Power Dissipation ( Max):62.5W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:16A (Tc)
- Rds On ( Max) @ Id, Vgs:8mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:35 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1800 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
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