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Vishay SQP50P03-07_GE3
MOSFET P-CH 30V 50A TO220AB
Manufacturer # :SQP50P03-07_GE3
Manufacturer :Vishay
Dasenic # :SQP50P03-07_GE3-DS
Datasheet :
SQP50P03-07_GE3 Datasheet
SQP50P03-07_GE3 DatasheetCustomer # :
Description : MOSFET P-CH 30V 50A TO220AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 3.4470 | $ 3.45 |
| 10+ | $ 2.6640 | $ 26.64 |
| 100+ | $ 2.4930 | $ 249.3 |
| 500+ | $ 2.0430 | $ 1021.5 |
In Stock: 9174
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 3.447
Total :$ 3.45
Delivery :
Payment :
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SQP50P03-07_GE3 information
Vishay SQP50P03-07_GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Last Time Buy
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220AB
- Power Dissipation ( Max):150W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:50A (Tc)
- Rds On ( Max) @ Id, Vgs:7mOhm @ 30A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:155 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:5380 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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