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Vishay SQM60N06-15_GE3
MOSFET N-CH 60V 56A TO263
Manufacturer # :SQM60N06-15_GE3
Manufacturer :Vishay
Dasenic # :SQM60N06-15_GE3-DS
Datasheet :
SQM60N06-15_GE3 Datasheet
SQM60N06-15_GE3 DatasheetCustomer # :
Description : MOSFET N-CH 60V 56A TO263
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.2680 | $ 2.27 |
| 10+ | $ 1.8900 | $ 18.9 |
| 100+ | $ 1.4310 | $ 143.1 |
| 250+ | $ 1.3770 | $ 344.25 |
| 500+ | $ 1.1340 | $ 567 |
In Stock: 3876
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.268
Total :$ 2.27
Delivery :
Payment :
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SQM60N06-15_GE3 information
Vishay SQM60N06-15_GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-263 (D²Pak)
- Power Dissipation ( Max):107W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:56A (Tc)
- Rds On ( Max) @ Id, Vgs:15mOhm @ 30A, 10V
- Vgs(th) ( Max) @ Id:3.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:50 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2480 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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