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Vishay SQM120N10-09_GE3
MOSFET N-CH 100V 120A TO263
Manufacturer # :SQM120N10-09_GE3
Manufacturer :Vishay
Dasenic # :SQM120N10-09_GE3-DS
Datasheet :
SQM120N10-09_GE3 Datasheet
SQM120N10-09_GE3 DatasheetCustomer # :
Description : MOSFET N-CH 100V 120A TO263
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 4.3516 | $ 43.52 |
| 800+ | $ 3.6263 | $ 2901.04 |
| 1600+ | $ 3.1050 | $ 4968 |
| 2400+ | $ 2.9237 | $ 7016.88 |
| 5600+ | $ 2.8050 | $ 15708 |
In Stock: 753
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 4.3516
Total :$ 4.35
Delivery :
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SQM120N10-09_GE3 information
Vishay SQM120N10-09_GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-263 (D²Pak)
- Power Dissipation ( Max):375W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):100 V
- Current - Continuous Drain ( Id) @ 25° C:120A (Tc)
- Rds On ( Max) @ Id, Vgs:9.5mOhm @ 30A, 10V
- Vgs(th) ( Max) @ Id:3.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:180 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:8645 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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