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Vishay SQM110P04-04L-GE3
MOSFET P-CH 40V 120A TO263
Manufacturer # :SQM110P04-04L-GE3
Manufacturer :Vishay
Dasenic # :SQM110P04-04L-GE3-DS
Datasheet :
SQM110P04-04L-GE3 Datasheet
SQM110P04-04L-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 40V 120A TO263
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 7.2914 | $ 72.91 |
| 800+ | $ 6.0762 | $ 4860.96 |
| 1600+ | $ 5.2027 | $ 8324.32 |
| 2400+ | $ 4.8989 | $ 11757.36 |
In Stock: 22
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 7.2914
Total :$ 7.29
Delivery :
Payment :
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SQM110P04-04L-GE3 information
Vishay SQM110P04-04L-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-263 (D²Pak)
- Power Dissipation ( Max):375W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:120A (Tc)
- Rds On ( Max) @ Id, Vgs:4mOhm @ 30A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:330 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:13980 pF @ 20 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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