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Vishay SQJQ402E-T1_GE3
MOSFET N-CH 40V 200A PPAK 8 X 8
Manufacturer # :SQJQ402E-T1_GE3
Manufacturer :Vishay
Dasenic # :SQJQ402E-T1_GE3-DS
Datasheet :
SQJQ402E-T1_GE3 Datasheet
SQJQ402E-T1_GE3 DatasheetCustomer # :
Description : MOSFET N-CH 40V 200A PPAK 8 X 8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.4570 | $ 2.46 |
| 10+ | $ 2.0430 | $ 20.43 |
| 100+ | $ 1.6290 | $ 162.9 |
| 250+ | $ 1.5030 | $ 375.75 |
| 500+ | $ 1.3680 | $ 684 |
In Stock: 5838
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.457
Total :$ 2.46
Delivery :
Payment :
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SQJQ402E-T1_GE3 information
Vishay SQJQ402E-T1_GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 8 x 8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 8 x 8
- Power Dissipation ( Max):150W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:200A (Tc)
- Rds On ( Max) @ Id, Vgs:1.7mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:260 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:13500 pF @ 20 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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