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1 : $3.2400
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Vishay SQJQ112E-T1_GE3
AUTOMOTIVE N-CHANNEL 100 V (D-S)
Manufacturer # :SQJQ112E-T1_GE3
Manufacturer :Vishay
Dasenic # :SQJQ112E-T1_GE3-DS
Datasheet :
SQJQ112E-T1_GE3 Datasheet
SQJQ112E-T1_GE3 DatasheetCustomer # :
Description : AUTOMOTIVE N-CHANNEL 100 V (D-S)
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 3.2400 | $ 3.24 |
| 10+ | $ 2.7180 | $ 27.18 |
| 100+ | $ 2.2050 | $ 220.5 |
| 500+ | $ 1.9530 | $ 976.5 |
| 1000+ | $ 1.6740 | $ 1674 |
In Stock: 6015
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 3.24
Total :$ 3.24
Delivery :
Payment :
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SQJQ112E-T1_GE3 information
Vishay SQJQ112E-T1_GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 8 x 8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 8 x 8
- Power Dissipation ( Max):600W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):100 V
- Current - Continuous Drain ( Id) @ 25° C:296A (Tc)
- Rds On ( Max) @ Id, Vgs:2.53mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:3.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:272 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:15945 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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