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Vishay SQJA06EP-T1_GE3
MOSFET N-CH 60V 57A PPAK SO-8
Manufacturer # :SQJA06EP-T1_GE3
Manufacturer :Vishay
Dasenic # :SQJA06EP-T1_GE3-DS
Datasheet :
SQJA06EP-T1_GE3 Datasheet
SQJA06EP-T1_GE3 DatasheetCustomer # :
Description : MOSFET N-CH 60V 57A PPAK SO-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.7110 | $ 7.11 |
| 3000+ | $ 0.3950 | $ 1185 |
| 6000+ | $ 0.3921 | $ 2352.6 |
In Stock: 10666
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.711
Total :$ 0.71
Delivery :
Payment :
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SQJA06EP-T1_GE3 information
Vishay SQJA06EP-T1_GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):55W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:57A (Tc)
- Rds On ( Max) @ Id, Vgs:8.7mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:3.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:45 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2800 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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