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Vishay SQJ912BEP-T1_GE3
Manufacturer # :SQJ912BEP-T1_GE3
Manufacturer :Vishay
Dasenic # :SQJ912BEP-T1_GE3-DS
Datasheet : SQJ912BEP-T1_GE3 Datasheet
Customer # :
Description : MOSFET N-CH DUAL 40V PPSO-8L
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In Stock: 16283
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.9081
Total :$ 0.91
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Payment :
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SQJ912BEP-T1_GE3 information
Vishay SQJ912BEP-T1_GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8 Dual
- Power - Max:48W (Tc)
- Supplier Device Package:PowerPAK® SO-8 Dual
- F E T Type:2 N-Channel (Dual)
- F E T Feature:Standard
- Drain to Source Voltage ( Vdss):40V
- Current - Continuous Drain ( Id) @ 25° C:30A (Tc)
- Rds On ( Max) @ Id, Vgs:11mOhm @ 9A, 10V
- Vgs(th) ( Max) @ Id:2V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:60nC @ 10V
- Input Capacitance ( Ciss) ( Max) @ Vds:3000pF @ 25V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
SQJ912BEP-T1_GE3 provided by Vishay
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader.
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