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Vishay SQJ431AEP-T1_BE3
P-CHANNEL 200-V (D-S) 175C MOSFE
Manufacturer # :SQJ431AEP-T1_BE3
Manufacturer :Vishay
Dasenic # :SQJ431AEP-T1_BE3-DS
Datasheet :
SQJ431AEP-T1_BE3 Datasheet
SQJ431AEP-T1_BE3 DatasheetCustomer # :
Description : P-CHANNEL 200-V (D-S) 175C MOSFE
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.1504 | $ 11.5 |
| 3000+ | $ 0.6391 | $ 1917.3 |
| 6000+ | $ 0.6150 | $ 3690 |
| 9000+ | $ 0.5947 | $ 5352.3 |
In Stock: 9000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.1504
Total :$ 1.15
Delivery :
Payment :
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SQJ431AEP-T1_BE3 information
Vishay SQJ431AEP-T1_BE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):68W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):200 V
- Current - Continuous Drain ( Id) @ 25° C:9.4A (Tc)
- Rds On ( Max) @ Id, Vgs:305mOhm @ 3.8A, 10V
- Vgs(th) ( Max) @ Id:3.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:85 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:3700 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):6V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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