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Vishay SQJ401EP-T1_GE3
MOSFET P-CH 12V 32A PPAK SO-8
Manufacturer # :SQJ401EP-T1_GE3
Manufacturer :Vishay
Dasenic # :SQJ401EP-T1_GE3-DS
Datasheet :
SQJ401EP-T1_GE3 Datasheet
SQJ401EP-T1_GE3 DatasheetCustomer # :
Description : MOSFET P-CH 12V 32A PPAK SO-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.7550 | $ 1.76 |
| 10+ | $ 1.4580 | $ 14.58 |
| 100+ | $ 1.1610 | $ 116.1 |
| 250+ | $ 1.0710 | $ 267.75 |
| 500+ | $ 0.9720 | $ 486 |
In Stock: 46127
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.755
Total :$ 1.75
Delivery :
Payment :
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SQJ401EP-T1_GE3 information
Vishay SQJ401EP-T1_GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):83W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):12 V
- Current - Continuous Drain ( Id) @ 25° C:32A (Tc)
- Rds On ( Max) @ Id, Vgs:6mOhm @ 15A, 4.5V
- Vgs(th) ( Max) @ Id:1.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:164 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:10015 pF @ 6 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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