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Vishay SQJ168ELP-T1_GE3
AUTOMOTIVE N-CHANNEL 60 V (D-S)
Manufacturer # :SQJ168ELP-T1_GE3
Manufacturer :Vishay
Dasenic # :SQJ168ELP-T1_GE3-DS
Datasheet :
SQJ168ELP-T1_GE3 Datasheet
SQJ168ELP-T1_GE3 DatasheetCustomer # :
Description : AUTOMOTIVE N-CHANNEL 60 V (D-S)
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.5206 | $ 5.21 |
| 3000+ | $ 0.2892 | $ 867.6 |
| 6000+ | $ 0.2740 | $ 1644 |
| 9000+ | $ 0.2537 | $ 2283.3 |
| 30000+ | $ 0.2512 | $ 7536 |
In Stock: 7200
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.5206
Total :$ 0.52
Delivery :
Payment :
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SQJ168ELP-T1_GE3 information
Vishay SQJ168ELP-T1_GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):29.4W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:24A (Tc)
- Rds On ( Max) @ Id, Vgs:36mOhm @ 15A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:20 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:987 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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