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Vishay SQJ136ELP-T1_GE3
MOSFET N-CH 40V 350A PPAK SO-8
Manufacturer # :SQJ136ELP-T1_GE3
Manufacturer :Vishay
Dasenic # :SQJ136ELP-T1_GE3-DS
Datasheet :
SQJ136ELP-T1_GE3 Datasheet
SQJ136ELP-T1_GE3 DatasheetCustomer # :
Description : MOSFET N-CH 40V 350A PPAK SO-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.1801 | $ 11.8 |
| 3000+ | $ 0.6556 | $ 1966.8 |
| 6000+ | $ 0.6310 | $ 3786 |
| 9000+ | $ 0.6101 | $ 5490.9 |
In Stock: 9000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.1801
Total :$ 1.18
Delivery :
Payment :
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SQJ136ELP-T1_GE3 information
Vishay SQJ136ELP-T1_GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):500W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:350A (Tc)
- Rds On ( Max) @ Id, Vgs:1.12mOhm @ 15A, 10V
- Vgs(th) ( Max) @ Id:2.2V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:150 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:8015 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):-
- Vgs ( Max):±20V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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