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Vishay SQD50P04-09L_GE3
MOSFET P-CH 40V 50A TO252
Manufacturer # :SQD50P04-09L_GE3
Manufacturer :Vishay
Dasenic # :SQD50P04-09L_GE3-DS
Datasheet :
SQD50P04-09L_GE3 Datasheet
SQD50P04-09L_GE3 DatasheetCustomer # :
Description : MOSFET P-CH 40V 50A TO252
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 35+ | $ 1.3280 | $ 46.48 |
| 85+ | $ 1.0896 | $ 92.62 |
| 130+ | $ 1.0556 | $ 137.23 |
| 180+ | $ 1.0215 | $ 183.87 |
| 230+ | $ 0.9875 | $ 227.13 |
In Stock: 29048
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.328
Total :$ 1.33
Delivery :
Payment :
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SQD50P04-09L_GE3 information
Vishay SQD50P04-09L_GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-252AA
- Power Dissipation ( Max):136W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:50A (Tc)
- Rds On ( Max) @ Id, Vgs:9.4mOhm @ 17A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:155 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:6675 pF @ 20 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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