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1 : $2.4390
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Vishay SQD50P03-07_GE3
MOSFET P-CH 30V 50A TO252AA
Manufacturer # :SQD50P03-07_GE3
Manufacturer :Vishay
Dasenic # :SQD50P03-07_GE3-DS
Datasheet :
SQD50P03-07_GE3 Datasheet
SQD50P03-07_GE3 DatasheetCustomer # :
Description : MOSFET P-CH 30V 50A TO252AA
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.4390 | $ 2.44 |
| 10+ | $ 2.0250 | $ 20.25 |
| 100+ | $ 1.6110 | $ 161.1 |
| 500+ | $ 1.3680 | $ 684 |
| 1000+ | $ 1.1610 | $ 1161 |
In Stock: 9811
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.439
Total :$ 2.44
Delivery :
Payment :
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SQD50P03-07_GE3 information
Vishay SQD50P03-07_GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-252AA
- Power Dissipation ( Max):136W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:50A (Tc)
- Rds On ( Max) @ Id, Vgs:7mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:146 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:5490 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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