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Vishay SQD100N04-3M6L_GE3
MOSFET N-CH 40V 100A TO252AA
Manufacturer # :SQD100N04-3M6L_GE3
Manufacturer :Vishay
Dasenic # :SQD100N04-3M6L_GE3-DS
Datasheet :
SQD100N04-3M6L_GE3 Datasheet
SQD100N04-3M6L_GE3 DatasheetCustomer # :
Description : MOSFET N-CH 40V 100A TO252AA
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.3950 | $ 1.4 |
| 10+ | $ 1.1610 | $ 11.61 |
| 100+ | $ 0.9270 | $ 92.7 |
| 250+ | $ 0.8505 | $ 212.63 |
| 500+ | $ 0.7722 | $ 386.1 |
In Stock: 10155
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.395
Total :$ 1.40
Delivery :
Payment :
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SQD100N04-3M6L_GE3 information
Vishay SQD100N04-3M6L_GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-252AA
- Power Dissipation ( Max):136W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:100A (Tc)
- Rds On ( Max) @ Id, Vgs:3.6mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:3.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:105 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:6700 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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