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Vishay SQA470EEJ-T1_GE3
MOSFET N-CH 30V 2.25A PPAK SC70
Manufacturer # :SQA470EEJ-T1_GE3
Manufacturer :Vishay
Dasenic # :SQA470EEJ-T1_GE3-DS
Datasheet :
SQA470EEJ-T1_GE3 Datasheet
SQA470EEJ-T1_GE3 DatasheetCustomer # :
Description : MOSFET N-CH 30V 2.25A PPAK SC70
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.2301 | $ 0.23 |
| 10+ | $ 0.2098 | $ 2.1 |
| 25+ | $ 0.2091 | $ 5.23 |
| 100+ | $ 0.1994 | $ 19.94 |
| 250+ | $ 0.1905 | $ 47.63 |
In Stock: 9000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.2301
Total :$ 0.23
Delivery :
Payment :
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SQA470EEJ-T1_GE3 information
Vishay SQA470EEJ-T1_GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SC-70-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SC-70-6
- Power Dissipation ( Max):13.6W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:2.25A (Tc)
- Rds On ( Max) @ Id, Vgs:56mOhm @ 2A, 4.5V
- Vgs(th) ( Max) @ Id:1.6V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:5.2 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:453 pF @ 20 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±12V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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