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1 : $1.2420
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Vishay SQ4435EY-T1_GE3
MOSFET P-CHANNEL 30V 15A 8SOIC
Manufacturer # :SQ4435EY-T1_GE3
Manufacturer :Vishay
Dasenic # :SQ4435EY-T1_GE3-DS
Datasheet :
SQ4435EY-T1_GE3 Datasheet
SQ4435EY-T1_GE3 DatasheetCustomer # :
Description : MOSFET P-CHANNEL 30V 15A 8SOIC
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.2420 | $ 1.24 |
| 10+ | $ 1.0260 | $ 10.26 |
| 100+ | $ 0.7938 | $ 79.38 |
| 500+ | $ 0.6732 | $ 336.6 |
| 1000+ | $ 0.5481 | $ 548.1 |
In Stock: 13681
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.242
Total :$ 1.24
Delivery :
Payment :
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SQ4435EY-T1_GE3 information
Vishay SQ4435EY-T1_GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOIC
- Power Dissipation ( Max):6.8W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:15A (Tc)
- Rds On ( Max) @ Id, Vgs:18mOhm @ 8A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:58 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2170 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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