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1 : $1.4220
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Vishay SQ4153EY-T1_GE3
MOSFET P-CHANNEL 12V 25A 8SOIC
Manufacturer # :SQ4153EY-T1_GE3
Manufacturer :Vishay
Dasenic # :SQ4153EY-T1_GE3-DS
Datasheet :
SQ4153EY-T1_GE3 Datasheet
SQ4153EY-T1_GE3 DatasheetCustomer # :
Description : MOSFET P-CHANNEL 12V 25A 8SOIC
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.4220 | $ 1.42 |
| 10+ | $ 1.1700 | $ 11.7 |
| 100+ | $ 0.9090 | $ 90.9 |
| 500+ | $ 0.7695 | $ 384.75 |
| 1000+ | $ 0.6264 | $ 626.4 |
In Stock: 50522
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.422
Total :$ 1.42
Delivery :
Payment :
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SQ4153EY-T1_GE3 information
Vishay SQ4153EY-T1_GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOIC
- Power Dissipation ( Max):7.1W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):12 V
- Current - Continuous Drain ( Id) @ 25° C:25A (Tc)
- Rds On ( Max) @ Id, Vgs:8.32mOhm @ 14A, 4.5V
- Vgs(th) ( Max) @ Id:900mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:151 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:11000 pF @ 6 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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