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Vishay SQ3460EV-T1_GE3
MOSFET N-CH 20V 8A 6TSOP
Manufacturer # :SQ3460EV-T1_GE3
Manufacturer :Vishay
Dasenic # :SQ3460EV-T1_GE3-DS
Datasheet :
SQ3460EV-T1_GE3 Datasheet
SQ3460EV-T1_GE3 DatasheetCustomer # :
Description : MOSFET N-CH 20V 8A 6TSOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.8820 | $ 0.88 |
| 10+ | $ 0.7218 | $ 7.22 |
| 100+ | $ 0.5616 | $ 56.16 |
| 500+ | $ 0.4761 | $ 238.05 |
| 1000+ | $ 0.3879 | $ 387.9 |
In Stock: 9162
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.882
Total :$ 0.88
Delivery :
Payment :
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SQ3460EV-T1_GE3 information
Vishay SQ3460EV-T1_GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:6-TSOP
- Power Dissipation ( Max):3.6W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:8A (Tc)
- Rds On ( Max) @ Id, Vgs:30mOhm @ 5.1A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:14 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1060 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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