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Vishay SQ3419AEEV-T1_BE3
P-CHANNEL 40-V (D-S) 175C MOSFET
Manufacturer # :SQ3419AEEV-T1_BE3
Manufacturer :Vishay
Dasenic # :SQ3419AEEV-T1_BE3-DS
Datasheet :
SQ3419AEEV-T1_BE3 Datasheet
SQ3419AEEV-T1_BE3 DatasheetCustomer # :
Description : P-CHANNEL 40-V (D-S) 175C MOSFET
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.6120 | $ 0.61 |
| 10+ | $ 0.5346 | $ 5.35 |
| 100+ | $ 0.3645 | $ 36.45 |
| 500+ | $ 0.3051 | $ 152.55 |
| 1000+ | $ 0.2673 | $ 267.3 |
In Stock: 42577
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.612
Total :$ 0.61
Delivery :
Payment :
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SQ3419AEEV-T1_BE3 information
Vishay SQ3419AEEV-T1_BE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:6-TSOP
- Power Dissipation ( Max):5W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:6.9A (Tc)
- Rds On ( Max) @ Id, Vgs:61mOhm @ 2.5A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:12.5 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:975 pF @ 20 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±12V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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