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1 : $0.4318
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Vishay SQ2361EES-T1-GE3
MOSFET P-CH 60V 2.5A SOT23-3
Manufacturer # :SQ2361EES-T1-GE3
Manufacturer :Vishay
Dasenic # :SQ2361EES-T1-GE3-DS
Datasheet :
SQ2361EES-T1-GE3 Datasheet
SQ2361EES-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 60V 2.5A SOT23-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.6477 | $ 6.48 |
| 3000+ | $ 0.4318 | $ 1295.4 |
| 6000+ | $ 0.4091 | $ 2454.6 |
| 9000+ | $ 0.3788 | $ 3409.2 |
| 30000+ | $ 0.3727 | $ 11181 |
In Stock: 88
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.6477
Total :$ 0.65
Delivery :
Payment :
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SQ2361EES-T1-GE3 information
Vishay SQ2361EES-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3 (TO-236)
- Power Dissipation ( Max):2W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:2.5A (Tc)
- Rds On ( Max) @ Id, Vgs:150mOhm @ 2.4A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:17 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:545 pF @ 30 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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