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Vishay SQ2325ES-T1_GE3
MOSFET P-CH 150V 840MA TO236
Manufacturer # :SQ2325ES-T1_GE3
Manufacturer :Vishay
Dasenic # :SQ2325ES-T1_GE3-DS
Datasheet :
SQ2325ES-T1_GE3 Datasheet
SQ2325ES-T1_GE3 DatasheetCustomer # :
Description : MOSFET P-CH 150V 840MA TO236
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 5+ | $ 0.2295 | $ 1.15 |
| 10+ | $ 0.2268 | $ 2.27 |
| 50+ | $ 0.2241 | $ 11.21 |
| 100+ | $ 0.2016 | $ 20.16 |
| 200+ | $ 0.2007 | $ 40.14 |
In Stock: 19309
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.2295
Total :$ 0.23
Delivery :
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SQ2325ES-T1_GE3 information
Vishay SQ2325ES-T1_GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TA)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3 (TO-236)
- Power Dissipation ( Max):3W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):150 V
- Current - Continuous Drain ( Id) @ 25° C:840mA (Tc)
- Rds On ( Max) @ Id, Vgs:1.77Ohm @ 500mA, 10V
- Vgs(th) ( Max) @ Id:3.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:10 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:250 pF @ 50 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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