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Vishay Intertechnology SQ1912EH-T1_GE3
MOSFET 2 N-CH 20V 800MA SC70-6
Manufacturer # :SQ1912EH-T1_GE3
Manufacturer :Vishay Intertechnology
Dasenic # :FD2DAF-DS
Datasheet :
SQ1912EH-T1_GE3 Datasheet
SQ1912EH-T1_GE3 DatasheetSample :
Customer # :
Description : MOSFET 2 N-CH 20V 800MA SC70-6 6-TSSOP, SC-88, SOT-363
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.178200 | $ 1.78 |
| 3000+ | $ 0.099000 | $ 297 |
| 6000+ | $ 0.096300 | $ 577.8 |
| 12000+ | $ 0.093600 | $ 1123.2 |
| 15000+ | $ 0.092700 | $ 1390.5 |
In Stock: 18408
MOQ :1 PCS
Packaging :6-TSSOP, SC-88, SOT-363
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.1782
Total :$ 0.18
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Payment :
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- Category:Discrete Semiconductor Devices/FETs, MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Package / Case:6-TSSOP, SC-88, SOT-363
- Power - Max:1.5W
- Supplier Device Package:SC-70-6
- F E T Type:2 N-Channel (Dual)
- F E T Feature:Standard
- Drain to Source Voltage ( Vdss):20V
- Current - Continuous Drain ( Id) @ 25° C:800mA (Tc)
- Rds On ( Max) @ Id, Vgs:280mOhm @ 1.2A, 4.5V
- Vgs(th) ( Max) @ Id:1.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:1.15nC @ 4.5V
- Input Capacitance ( Ciss) ( Max) @ Vds:75pF @ 10V
