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Vishay SISS80DN-T1-GE3
MOSFET N-CH 20V 58.3A/210A PPAK
Manufacturer # :SISS80DN-T1-GE3
Manufacturer :Vishay
Dasenic # :SISS80DN-T1-GE3-DS
Datasheet :
SISS80DN-T1-GE3 Datasheet
SISS80DN-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 20V 58.3A/210A PPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.1258 | $ 0.13 |
In Stock: 7200
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.1258
Total :$ 0.13
Delivery :
Payment :
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SISS80DN-T1-GE3 information
Vishay SISS80DN-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8S
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 1212-8S
- Power Dissipation ( Max):5W (Ta), 65W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:58.3A (Ta), 210A (Tc)
- Rds On ( Max) @ Id, Vgs:0.92mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:1.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:122 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:6450 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 10V
- Vgs ( Max):+12V, -8V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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