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Vishay Intertechnology SISS70DN-T1-GE3
MOSFET N-CH 125V 8.5A/31A PPAK
Manufacturer # :SISS70DN-T1-GE3
Manufacturer :Vishay Intertechnology
Dasenic # :27E789-DS
Datasheet :
SISS70DN-T1-GE3 Datasheet
SISS70DN-T1-GE3 DatasheetSample :
Customer # :
Description : MOSFET N-CH 125V 8.5A/31A PPAK PowerPAK® 1212-8S PowerPAK® 1212-8S
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.170000 | $ 1.17 |
| 10+ | $ 0.945000 | $ 9.45 |
| 100+ | $ 0.747900 | $ 74.79 |
| 500+ | $ 0.633600 | $ 316.8 |
| 1000+ | $ 0.516600 | $ 516.6 |
In Stock: 10800
MOQ :1 PCS
Packaging :PowerPAK® 1212-8S PowerPAK® 1212-8S
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 1.17
Total :$ 1.17
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 1212-8S
- Power Dissipation ( Max):5.1W (Ta), 65.8W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):125 V
- Current - Continuous Drain ( Id) @ 25° C:8.5A (Ta), 31A (Tc)
- Rds On ( Max) @ Id, Vgs:29.8mOhm @ 8.5A, 10V
- Vgs(th) ( Max) @ Id:4.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:15.3 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:535 pF @ 62.5 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- Packaging:PowerPAK® 1212-8S
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