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Vishay SISS66DN-T1-GE3
MOSFET N-CH 30V 49.1/178.3A PPAK
Manufacturer # :SISS66DN-T1-GE3
Manufacturer :Vishay
Dasenic # :SISS66DN-T1-GE3-DS
Datasheet :
SISS66DN-T1-GE3 Datasheet
SISS66DN-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 30V 49.1/178.3A PPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.3050 | $ 1.31 |
| 10+ | $ 1.0620 | $ 10.62 |
| 100+ | $ 0.8307 | $ 83.07 |
| 500+ | $ 0.7038 | $ 351.9 |
| 1000+ | $ 0.5733 | $ 573.3 |
In Stock: 20938
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.305
Total :$ 1.30
Delivery :
Payment :
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SISS66DN-T1-GE3 information
Vishay SISS66DN-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8S
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 1212-8S
- Power Dissipation ( Max):5.1W (Ta), 65.8W (Tc)
- F E T Type:N-Channel
- F E T Feature:Schottky Diode (Body)
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:49.1A (Ta), 178.3A (Tc)
- Rds On ( Max) @ Id, Vgs:1.38mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:85.5 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:3327 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):+20V, -16V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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