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1 : $1.1970
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Vishay SISS588DN-T1-GE3
N-CHANNEL 80 V (D-S) MOSFET POWE
Manufacturer # :SISS588DN-T1-GE3
Manufacturer :Vishay
Dasenic # :SISS588DN-T1-GE3-DS
Datasheet :
SISS588DN-T1-GE3 Datasheet
SISS588DN-T1-GE3 DatasheetCustomer # :
Description : N-CHANNEL 80 V (D-S) MOSFET POWE
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.1970 | $ 1.2 |
| 10+ | $ 0.9810 | $ 9.81 |
| 100+ | $ 0.7632 | $ 76.32 |
| 500+ | $ 0.6462 | $ 323.1 |
| 1000+ | $ 0.5265 | $ 526.5 |
In Stock: 3693
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.197
Total :$ 1.20
Delivery :
Payment :
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SISS588DN-T1-GE3 information
Vishay SISS588DN-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8S
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 1212-8S
- Power Dissipation ( Max):4.8W (Ta), 56.8W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):80 V
- Current - Continuous Drain ( Id) @ 25° C:16.9A (Ta), 58.1A (Tc)
- Rds On ( Max) @ Id, Vgs:8mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:28.5 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1380 pF @ 40 V
- Drive Voltage ( Max Rds On, Min Rds On):7.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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