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Vishay SISS54DN-T1-GE3
N-CHANNEL 30-V (D-S) MOSFET POWE
Manufacturer # :SISS54DN-T1-GE3
Manufacturer :Vishay
Dasenic # :SISS54DN-T1-GE3-DS
Datasheet :
SISS54DN-T1-GE3 Datasheet
SISS54DN-T1-GE3 DatasheetCustomer # :
Description : N-CHANNEL 30-V (D-S) MOSFET POWE
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.1043 | $ 11.04 |
| 3000+ | $ 0.6135 | $ 1840.5 |
| 6000+ | $ 0.5905 | $ 3543 |
| 9000+ | $ 0.5709 | $ 5138.1 |
In Stock: 29351
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.1043
Total :$ 1.10
Delivery :
Payment :
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SISS54DN-T1-GE3 information
Vishay SISS54DN-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8S
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 1212-8S
- Power Dissipation ( Max):5W (Ta), 65.7W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:51.1A (Ta), 185.6A (Tc)
- Rds On ( Max) @ Id, Vgs:1.06mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:2.2V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:72 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:3450 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):+16V, -12V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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