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Vishay SISS32LDN-T1-GE3

MOSFET N-CH 80V 17.4A/63A PPAK
part number has RoHS
Manufacturer # :SISS32LDN-T1-GE3
Manufacturer :Vishay
Dasenic # :SISS32LDN-T1-GE3-DS
Customer # :
Description : MOSFET N-CH 80V 17.4A/63A PPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
1+$ 1.0440$ 1.04
10+$ 0.8397$ 8.4
100+$ 0.6651$ 66.51
500+$ 0.5634$ 281.7
1000+$ 0.4590$ 459
In Stock: 45858
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.044
Total :$ 1.04
Delivery :
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SISS32LDN-T1-GE3 information

  • Vishay SISS32LDN-T1-GE3 technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
  • Product Status:Active
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® 1212-8SH
  • Technology:MOSFET (Metal Oxide)
  • Supplier Device Package:PowerPAK® 1212-8SH
  • Power Dissipation ( Max):5W (Ta), 65.7W (Tc)
  • F E T Type:N-Channel
  • F E T Feature:-
  • Drain to Source Voltage ( Vdss):80 V
  • Current - Continuous Drain ( Id) @ 25° C:17.4A (Ta), 63A (Tc)
  • Rds On ( Max) @ Id, Vgs:7.2mOhm @ 15A, 10V
  • Vgs(th) ( Max) @ Id:2.5V @ 250µA
  • Gate Charge ( Qg) ( Max) @ Vgs:57 nC @ 10 V
  • Input Capacitance ( Ciss) ( Max) @ Vds:2550 pF @ 40 V
  • Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
  • Vgs ( Max):±20V
  • EU RoHS Status:RoHS Compliant
  • REACH Status:REACH is not affected
  • US ECCN:EAR99
  • China RoHS Status:Green Symbol: Green and environmentally friendly product

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