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Vishay SISS32LDN-T1-GE3
Manufacturer # :SISS32LDN-T1-GE3
Manufacturer :Vishay
Dasenic # :SISS32LDN-T1-GE3-DS
Datasheet : SISS32LDN-T1-GE3 Datasheet
Customer # :
Description : MOSFET N-CH 80V 17.4A/63A PPAK
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In Stock: 45858
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.044
Total :$ 1.04
Delivery :
Payment :
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SISS32LDN-T1-GE3 information
Vishay SISS32LDN-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8SH
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 1212-8SH
- Power Dissipation ( Max):5W (Ta), 65.7W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):80 V
- Current - Continuous Drain ( Id) @ 25° C:17.4A (Ta), 63A (Tc)
- Rds On ( Max) @ Id, Vgs:7.2mOhm @ 15A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:57 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2550 pF @ 40 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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