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Vishay SISHA10DN-T1-GE3
MOSFET N-CH 30V 25A/30A PPAK
Manufacturer # :SISHA10DN-T1-GE3
Manufacturer :Vishay
Dasenic # :SISHA10DN-T1-GE3-DS
Datasheet :
SISHA10DN-T1-GE3 Datasheet
SISHA10DN-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 30V 25A/30A PPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.0819 | $ 0.08 |
| 10+ | $ 0.0819 | $ 0.82 |
| 25+ | $ 0.0819 | $ 2.05 |
| 50+ | $ 0.0819 | $ 4.1 |
| 100+ | $ 0.0819 | $ 8.19 |
In Stock: 7200
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0819
Total :$ 0.08
Delivery :
Payment :
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SISHA10DN-T1-GE3 information
Vishay SISHA10DN-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8SH
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 1212-8SH
- Power Dissipation ( Max):3.6W (Ta), 39W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:25A (Ta), 30A (Tc)
- Rds On ( Max) @ Id, Vgs:3.7mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:2.2V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:51 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2425 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):+20V, -16V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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