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Vishay SISH112DN-T1-GE3
MOSFET N-CH 30V 11.3A PPAK
Manufacturer # :SISH112DN-T1-GE3
Manufacturer :Vishay
Dasenic # :SISH112DN-T1-GE3-DS
Datasheet :
SISH112DN-T1-GE3 Datasheet
SISH112DN-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 30V 11.3A PPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.2870 | $ 1.29 |
| 10+ | $ 1.0620 | $ 10.62 |
| 100+ | $ 0.8208 | $ 82.08 |
| 500+ | $ 0.6957 | $ 347.85 |
| 1000+ | $ 0.5670 | $ 567 |
In Stock: 6631
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.287
Total :$ 1.29
Delivery :
Payment :
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SISH112DN-T1-GE3 information
Vishay SISH112DN-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-50°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8SH
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 1212-8SH
- Power Dissipation ( Max):1.5W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:11.3A (Tc)
- Rds On ( Max) @ Id, Vgs:7.5mOhm @ 17.8A, 10V
- Vgs(th) ( Max) @ Id:1.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:27 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2610 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±12V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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