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Vishay SISA34DN-T1-GE3
Manufacturer # :SISA34DN-T1-GE3
Manufacturer :Vishay
Dasenic # :SISA34DN-T1-GE3-DS
Datasheet : SISA34DN-T1-GE3 Datasheet
Customer # :
Description : MOSFET N-CH 30V 40A PPAK1212-8
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In Stock: 1515
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.1
Total :$ 1.10
Delivery :
Payment :
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SISA34DN-T1-GE3 information
Vishay SISA34DN-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 1212-8
- Power Dissipation ( Max):20.8W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:40A (Tc)
- Rds On ( Max) @ Id, Vgs:6.7mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:2.4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:12 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1100 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):+20V, -16V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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