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Vishay SIS890ADN-T1-GE3
MOSFET N-CH 100V 7.6A/24.7A PPAK
Manufacturer # :SIS890ADN-T1-GE3
Manufacturer :Vishay
Dasenic # :SIS890ADN-T1-GE3-DS
Datasheet :
SIS890ADN-T1-GE3 Datasheet
SIS890ADN-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 100V 7.6A/24.7A PPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.5647 | $ 5.65 |
| 3000+ | $ 0.3137 | $ 941.1 |
| 6000+ | $ 0.2972 | $ 1783.2 |
| 9000+ | $ 0.2752 | $ 2476.8 |
| 30000+ | $ 0.2725 | $ 8175 |
In Stock: 11435
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.5647
Total :$ 0.56
Delivery :
Payment :
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SIS890ADN-T1-GE3 information
Vishay SIS890ADN-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 1212-8
- Power Dissipation ( Max):3.6W (Ta), 39W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):100 V
- Current - Continuous Drain ( Id) @ 25° C:7.6A (Ta), 24.7A (Tc)
- Rds On ( Max) @ Id, Vgs:25.5mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:29 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1330 pF @ 50 V
- Drive Voltage ( Max Rds On, Min Rds On):-
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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