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Vishay SIS435DNT-T1-GE3
MOSFET P-CH 20V 30A PPAK1212-8
Manufacturer # :SIS435DNT-T1-GE3
Manufacturer :Vishay
Dasenic # :SIS435DNT-T1-GE3-DS
Datasheet :
SIS435DNT-T1-GE3 Datasheet
SIS435DNT-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 20V 30A PPAK1212-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.4664 | $ 4.66 |
| 3000+ | $ 0.2591 | $ 777.3 |
| 6000+ | $ 0.2454 | $ 1472.4 |
| 9000+ | $ 0.2273 | $ 2045.7 |
| 30000+ | $ 0.2250 | $ 6750 |
In Stock: 13017
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.4664
Total :$ 0.47
Delivery :
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SIS435DNT-T1-GE3 information
Vishay SIS435DNT-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 1212-8
- Power Dissipation ( Max):3.7W (Ta), 39W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:30A (Tc)
- Rds On ( Max) @ Id, Vgs:5.4mOhm @ 13A, 4.5V
- Vgs(th) ( Max) @ Id:900mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:180 nC @ 8 V
- Input Capacitance ( Ciss) ( Max) @ Vds:5700 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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