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SIRC18DP-T1-GE3
MOSFET N-CH 30V 60A PPAK SO-8Dasenic Part Number : 88B054-DS
Manufacturer :Vishay Intertechnology
Manufacturer Part # : SIRC18DP-T1-GE3
Datasheet :Download
Sample :
Customer Reference :
Pricing (USD) : Prices are for reference only and aren't final sales prices.
In Stock: 23616
MOQ : 1 PCS
Packaging :PowerPAK® SO-8
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 1.17
Total : $ 1.17
* Tax not included , All prices are in USD
Delivery :
Payment :
- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):54.3W (Tc)
- F E T Type:N-Channel
- F E T Feature:Schottky Diode (Body)
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:60A (Tc)
- Rds On ( Max) @ Id, Vgs:1.1mOhm @ 15A, 10V
- Vgs(th) ( Max) @ Id:2.4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:111 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:5060 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):+20V, -16V