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Vishay SIRA14BDP-T1-GE3

MOSFET N-CH 30V 21A/64A PPAK SO8
part number has RoHS
Manufacturer # :SIRA14BDP-T1-GE3
Manufacturer :Vishay
Dasenic # :SIRA14BDP-T1-GE3-DS
Customer # :
Description : MOSFET N-CH 30V 21A/64A PPAK SO8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
1+$ 0.3960$ 0.4
10+$ 0.3411$ 3.41
100+$ 0.2430$ 24.3
500+$ 0.1980$ 99
1000+$ 0.1629$ 162.9
In Stock: 17411
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.396
Total :$ 0.40
Delivery :
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SIRA14BDP-T1-GE3 information

  • Vishay SIRA14BDP-T1-GE3 technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
  • Product Status:Active
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® SO-8
  • Technology:MOSFET (Metal Oxide)
  • Supplier Device Package:PowerPAK® SO-8
  • Power Dissipation ( Max):3.7W (Ta), 36W (Tc)
  • F E T Type:N-Channel
  • F E T Feature:-
  • Drain to Source Voltage ( Vdss):30 V
  • Current - Continuous Drain ( Id) @ 25° C:21A (Ta), 64A (Tc)
  • Rds On ( Max) @ Id, Vgs:5.38mOhm @ 10A, 10V
  • Vgs(th) ( Max) @ Id:2.2V @ 250µA
  • Gate Charge ( Qg) ( Max) @ Vgs:22 nC @ 10 V
  • Input Capacitance ( Ciss) ( Max) @ Vds:917 pF @ 15 V
  • Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
  • Vgs ( Max):+20V, -16V
  • EU RoHS Status:ROHS3 Compliant
  • MSL Rating:1 (Unlimited, 30°C/85%RH)
  • US ECCN:EAR99
  • HTS US:8541.29.0095
  • REACH Status:REACH is not affected
  • China RoHS Status:Green Symbol: Green and environmentally friendly product

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