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Vishay SIR888DP-T1-GE3
MOSFET N-CH 25V 40A PPAK SO-8
Manufacturer # :SIR888DP-T1-GE3
Manufacturer :Vishay
Dasenic # :SIR888DP-T1-GE3-DS
Datasheet :
SIR888DP-T1-GE3 Datasheet
SIR888DP-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 25V 40A PPAK SO-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 8.0262 | $ 80.26 |
| 3000+ | $ 4.4590 | $ 13377 |
| 6000+ | $ 4.3160 | $ 25896 |
| 12000+ | $ 4.1730 | $ 50076 |
| 18000+ | $ 4.0040 | $ 72072 |
In Stock: 2185
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 8.0262
Total :$ 8.03
Delivery :
Payment :
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SIR888DP-T1-GE3 information
Vishay SIR888DP-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):5W (Ta), 48W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):25 V
- Current - Continuous Drain ( Id) @ 25° C:40A (Tc)
- Rds On ( Max) @ Id, Vgs:3.25mOhm @ 15A, 10V
- Vgs(th) ( Max) @ Id:2.2V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:120 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:5065 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±16V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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