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Vishay SIR840DP-T1-GE3
MOSFET N-CH 30V PPAK SO-8
Manufacturer # :SIR840DP-T1-GE3
Manufacturer :Vishay
Dasenic # :SIR840DP-T1-GE3-DS
Datasheet :
SIR840DP-T1-GE3 Datasheet
SIR840DP-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 30V PPAK SO-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.0090 | $ 0.01 |
| 10+ | $ 0.0090 | $ 0.09 |
| 100+ | $ 0.0090 | $ 0.9 |
| 500+ | $ 0.0090 | $ 4.5 |
| 1000+ | $ 0.0090 | $ 9 |
In Stock: 30794
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.009
Total :$ 0.01
Delivery :
Payment :
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SIR840DP-T1-GE3 information
Vishay SIR840DP-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):-
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:-
- Rds On ( Max) @ Id, Vgs:-
- Vgs(th) ( Max) @ Id:-
- Gate Charge ( Qg) ( Max) @ Vgs:-
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):-
- Vgs ( Max):-
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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