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Vishay SIR662DP-T1-GE3
MOSFET N-CH 60V 60A PPAK SO-8
Manufacturer # :SIR662DP-T1-GE3
Manufacturer :Vishay
Dasenic # :SIR662DP-T1-GE3-DS
Datasheet :
SIR662DP-T1-GE3 Datasheet
SIR662DP-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 60V 60A PPAK SO-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 8+ | $ 6.0660 | $ 48.53 |
| 16+ | $ 5.6745 | $ 90.79 |
| 25+ | $ 5.4783 | $ 136.96 |
| 36+ | $ 5.0877 | $ 183.16 |
| 46+ | $ 4.8915 | $ 225.01 |
In Stock: 4800
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 6.066
Total :$ 6.07
Delivery :
Payment :
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SIR662DP-T1-GE3 information
Vishay SIR662DP-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):6.25W (Ta), 104W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:60A (Tc)
- Rds On ( Max) @ Id, Vgs:2.7mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:96 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:4365 pF @ 30 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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